Quantum confinement effect on defect level of hydrogen doped rutile VO₂ nanowires

Accurate description of solubility and defect ionization energies in low dimensional nanostructures is critical for electronic applications semiconductors with improved functionalities. Here, we present quantum confinement effect driven strategies tuning level hydrogen doping the core region rutile [Formula: see text](R) nanowires. The inverse dependence a bandgap diameter ([Formula: text]) confirms presence both interstitial substitution at O site behaves as deep donor nanowires, where significant. position charge transition becomes increasingly shallower increased nanowire diameters. defects decrease larger-diameter nanowires due to dielectric screening increment. This indicates possibility achieving n-type dopability large study prescribes optimizing extensive highly correlated 1D nanostructured materials.